AON2800 20v dual n-channel mosfet v ds i d (at v gs =4.5v) 4.5a r ds(on) (at v gs =4.5v) < 47m w r ds(on) (at v gs =2.5v) < 65m w symbol v ds the AON2800 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v drain-source voltage 20 dfn 2x2 package top bottom s1 g1 d2 s2 d1 g2 g1 d1 s1 g2 d2 s2 pin 1 pin 1 v gs i dm t j , t stg symbol t 10s steady-state t 10s steady-state maximum junction-to-ambient a maximum junction-to-ambient b c/w c/w maximum junction-to-ambient a 120 85 155 power dissipation b p d pulsed drain current c continuous drain current t a =25c w 1.5 a i d 4.5 3.8 24 t a =25c t a =70c v 8 gate-source voltage thermal characteristics units parameter typ max c/w r q ja 35 65 45 c/w r q ja maximum junction-to-ambient b 175 235 0.95 t a =70c junction and storage temperature range -55 to 150 c general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 20 m a v gs(th) gate threshold voltage 0.4 0.8 1.2 v i d(on) 24 a 37 47 t j =125c 55 70 47 65 m w g fs 14 s v sd 0.7 1 v i s 1.5 a c iss 285 360 435 pf c oss 45 65 85 pf c rss 30 50 70 pf r g 1.7 3.5 5.3 w q g (4.5v) 4.15 6 nc q gs 0.55 nc q gd 1.15 nc t d(on) 9.5 ns t r 43 ns t 26 ns reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =4a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =4a v gs =2.5v, i d =3a forward transconductance diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =10v, i d =4a gate source charge gate drain charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =4.5v, v ds =10v, r l =2.5 w , r =3 w t d(off) 26 ns t f 39 ns t rr 11 ns q rr 3 nc i f =4a, di/dt=100a/ m s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =4a, di/dt=100a/ m s turn-off delaytime r gen =3 w a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150 c may be used if the pcb allows it to. b. the value of r q ja is measured with the device mounted on a minimum pa d board with 2oz. copper, in a still air environmen t with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 150 c may be used if the pcb allows it to. c. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. AON2800 20v dual n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 3 6 9 12 15 0 1 2 3 4 i d (a) v gs (volts) figure 2: transfer characteristics (note d) 20 30 40 50 60 70 0 2 4 6 8 10 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note d) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note d) v gs =2.5v i d =3a v gs =4.5v i d =4a 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v 0 3 6 9 12 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note d) v gs =1.5v 2v 3v 3.5v 4.5v 2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note d) 25 c 125 c (note d) 30 40 50 60 70 80 90 100 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note d) i d =4a 25 c 125 c AON2800 20v dual n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 1 2 3 4 5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =4a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms ambient (note e) figure 9: maximum forward biased safe operating area (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =85 c/w AON2800 20v dual n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr AON2800 20v dual n-channel mosfet www.freescale.net.cn 5 / 5
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